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Details of Grant
 
EPSRC Reference: GR/S61218/01
Title: Sub 100nm III-V MOSFET's for Digital Applications
Principal Investigator: Professor I Thayne
Other Investigators:
Professor AMA Asenov Professor JR Barker Professor A Craven
Professor DRS Cumming Professor JH Davies Professor AR Long
Dr D MacIntyre Dr F Rahman Dr M Rahman
Dr S Roy Professor C Stanley Dr S Thoms
Dr E Wasige Professor JMR Weaver Professor C Wilkinson
Researcher Co-investigator:
Dr K Kalna Dr H Zhou
Project Partner:
Motorola SPS (Arizona)
Department: Electronics and Electrical Engineering
Organisation: University of Glasgow
Scheme: Standard Research
Starts: 01 December 2003 Ends: 31 May 2007 Value (£): 3,260,551
EPSRC Research Topic Classifications:
Bioelectronic Devices Electronic Devices and Subsystems
Inorganic Semiconductors: Characterisation Inorganic Semiconductors: Synthesis and Growth
Optoelectronic Devices and Circuits Radio Frequency (RF) and Microwave Technology
Systems on a Chip
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary
This 3 year proposal aims to assess the potential of III-V MOSFET digital devices as a solution to challenges in the latter half of the 2001 edition of the International Roadmap for Semiconductors (ITRS'01). In a unique partnership, several Glasgow research groups working in the areas of semiconductor material growth, nanoanalytic transmission electron microscopy, semiconductor materials transport characterization, semiconductor device modelling, nanofabrication technology and semiconductor device fabrication will work collaboratively with Motorola Inc. In the collaboration, Motorola will transfer proprietary intellectual property to enable Glasgow to rapidly utilise its sub-100 nm transistor technology capability to realise high speed III-V MOSFETs for digital applications. This technology development is the cornerstone to the realisation of an integrated platform enabling the long term convergence of digital, RF and optoelectronic components. This collaboration will propel the UK microelectronics research base onto the global stage, resulting in massively heightened visibility and with the potential to attract future inward investment in this key sector. Further this demonstrates a new model for industrial/academic collaboration enabling maximum exploitation of the core expertise of each organisation.
Final Report Summary
This 3 year proposal aims to assess the potential of III-V MOSFET digital devices as a solution to challenges in the latter half of the 2001 edition of the International Roadmap for Semiconductors (ITRS'01). In a unique partnership, several Glasgow research groups working in the areas of semiconductor material growth, nanoanalytic transmission electron microscopy, semiconductor materials transport characterization, semiconductor device modelling, nanofabrication technology and semiconductor device fabrication will work collaboratively with Motorola Inc. In the collaboration, Motorola will transfer proprietary intellectual property to enable Glasgow to rapidly utilise its sub-100 nm transistor technology capability to realise high speed III-V MOSFETs for digital applications. This technology development is the cornerstone to the realisation of an integrated platform enabling the long term convergence of digital, RF and optoelectronic components. This collaboration will propel the UK microelectronics research base onto the global stage, resulting in massively heightened visibility and with the potential to attract future inward investment in this key sector. Further this demonstrates a new model for industrial/academic collaboration enabling maximum exploitation of the core expertise of each organisation.
Further Information:  
Organisation Website: http://www.gla.ac.uk
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