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Researcher Details
 
Name: Professor CT Foxon
Organisation: University of Nottingham
Department: Sch of Physics & Astronomy
Current EPSRC-Supported Research Topics:
Electronic Devices & Subsys. Materials Characterisation
Materials Synthesis & Growth

Current EPSRC Support
EP/P019080/1 Strain-engineered graphene: growth, modification and electronic properties(C)
EP/K014471/1 Silicon Compatible GaN Power Electronics(C)
Previous EPSRC Support
EP/L013908/1 Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures.(C)
EP/K008323/1 Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.(C)
EP/K027808/1 Development of new CuMn-V epitaxial antiferromagnetic semiconductors for applications in spintronics(C)
EP/K040243/1 A Plasma-assisted Molecular Beam Epitaxy System for Engineering of Graphene/Boron Nitride Low Dimensional Structures(C)
EP/J015792/1 Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.(C)
EP/I035501/1 Solar cells based on InGaN nanostructures(C)
EP/I004203/1 Amorphous and crystalline GaNAs alloys for solar energy conversion devices(C)
EP/H002294/1 Spin Transfer Torque in Ferromagnetic Semiconductors and Hybrid Devices for Nanospintronics(C)
EP/G030634/1 Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals(C)
EP/G035202/1 Terahertz acoustic laser (saser) devices: fabrication and characterisation(C)
EP/G046867/1 Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy(C)
TS/G001448/1 Green Laser Diodes(C)
EP/G007160/1 Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting(C)
EP/F019076/1 Defect reduction in GaN using the in-situ growth of transition metal nitride layers(C)
EP/D051487/1 Investigation of growth kinetics and incorporation of impurities in group III-nitrides and group III-dilute nitrides using mass spectroscopy(P)
EP/E000673/1 Growth of thick and flat high quality GaN using nano-column compliant layers(C)
EP/C548825/1 Feasibility study of zinc-blende AIGaN heterojunction bipolar transistors(C)
EP/C526546/1 Probing the electronic, magnetic and structural properties of ferromagnetic semiconductors(C)
GR/S81407/01 Ferromagnetic Semiconductors: Materials Development & Spintronic Devices(C)
GR/S71859/01 Repair of Varian Gen II Molecular Beam Epitaxy System(P)
GR/S23582/01 Basic Technology: Hyperpolarised technologies for medical and materials sciences(C)
GR/S25630/01 Microstructural characterisation of III-V spintronic, photonic and electronic heterostructures(C)
GR/R47851/01 Characterisation of Surfaces, Thin Film and Nanometre Scale Structures by X-Ray Photoelectron Spectroscopy(C)
GR/R47417/01 Blue light from As-doped GaN low dimensional structures grown by molecular beam epitaxy(P)
GR/R46465/01 Group III-Nitride Heterostructures for Quantum Tunnelling Devices Grown by Molecular Beam Epitaxy(P)
GR/R17652/01 Mbe Materials For Room Temperature Spintronics(P)
GR/N35700/01 NETWORK: PHOTOVOLTAIC MATERIALS AND DEVICES(C)
GR/M82295/01 PHONON SCATTERING IN GALLIUM NITRIDE DEVICES UNDER ILLUMINATION(C)
GR/M94380/01 GROWTH OF GROUP III NITRIDES BY MOVPE AND PA-MOVPE(P)
GR/M67438/01 MBE GROWTH AND ASSESMENT OF GANAS - THE MISCIBILITY GAP, AS SURFACTANT EFFECTS AND CUBIC GAN LAYERS(P)
GR/M04365/01 PHONON SCATTERING AND HOT CARRIER ENERGY RELAXATION IN GALLIUM NITRIDE BASED ELECTRONIC DEVICES(C)
GR/L94819/01 GROWTH AND ASSESSMENT OF GAN SUBSTRATES FOR LASER DIODES AND FETS(C)
GR/L77157/01 GROWTH AND PROPERTIES OF GROUP III NITRIDES(P)
GR/L35423/01 BLUE/UV LASERS BASED ON NITRIDE SEMICONDUCTORS(C)
GR/K34870/01 MBMS AND RHEED STUDIES OF THE GROWTH OF GROUP III-NITRIDES(P)
GR/J48368/01 NOVEL STRUCTURES FOR VERTICAL CAVITY SURFACE EMITTING LASERS(C)
GR/H96997/01 PHONON STUDIES, TUNNELLING LITHOGRAPHY AND DEVELOPMENTS IN GROWTH BY THE NUMBERS SYNDICATE.(C)
GR/H34586/01 MODIFIED MBE GROWTH OF GA (ASN) ALLOY SEMICONDUCTORS(C)
Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator