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Details of Grant 

EPSRC Reference: GR/J55359/01
Principal Investigator: Whitehouse, Professor CR
Other Investigators:
Tanner, Professor BK Hagston, Professor W Hogg, Dr C
Lunn, Mr B
Researcher Co-Investigators:
Project Partners:
Department: Electronic and Electrical Engineering
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 17 December 1993 Ends: 16 June 1997 Value (£): 339,322
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
The initial 3-year phase of the DRA Malvern/SERC collaborative project (GR/F 84935, expiring Sept 93) has led to the successful construction of a world-first combined x-ray topography (XRT)/MBE facility. This chamber has very recently generated the first reported structural data recorded in-situ at different stages during the growth of InGaAs/GaAs strained-layer device structures, and has provided very important new data regarding the very intitial stages of strain-relaxation. Now that the new facility is fully proven, the present proposal seeks the funding required to continue the collaborative DRA/SERC project for a further 3-year period. Detailed in-situ experiments are planned to investigate strain-relaxation processes as a function of growth conditions, substrate orientation and compressive strain level in the InGaAs/GaAs system. Subsequent experiments, using the InGaAs/InP and InAlSb/InSb systems, will then investigate the influence of controlled tensile-strain levels. The unique experimental data obtained and the associated experiments will continue to be supported by state-of-the- art XRT image simulations, and the results will be used to establish important new predictive models for strain relaxation.
Key Findings
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Potential use in non-academic contexts
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Sectors submitted by the Researcher
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Further Information:  
Organisation Website: http://www.shef.ac.uk